sot223 pnp silicon planar high current (high performance) transistors issue 2 ? october 1995 features * 4 amps continuous current (10 amps peak current) * very low saturation voltages * excellent gain characteristics specified up to 3 amps partmarking details ? device type in full complementary types ? FZT955 - fzt855 fzt956 - n/a absolute maximum ratings. parameter symbol FZT955 fzt956 unit collector-base voltage v cbo -180 -220 v collector-emitter voltage v ceo -140 -200 v emitter-base voltage v ebo -6 v peak pulse current i cm -10 -5 a continuous collector current i c -4 -2 a power dissipation at t amb =25c p tot 3w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 square inch minimum FZT955 fzt956 3 - 284 c c e b
3 - 285 3 - 286 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v olts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - n o r mal ise d gain v b e (sat) - (v olts) v b e - ( v olts) i c - c o l le c to r c u r r e nt (amps ) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =5v v ce =5v 300 200 100 h fe - t ypical gain v ce - collector voltage (volts) safe operating area 11000 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001 0.001 FZT955 FZT955 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -180 -210 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -180 -210 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -140 -170 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-150v v cb =-150v,t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-150v v cb =-150v,t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -30 -70 -110 -275 -60 -120 -150 -370 mv mv mv mv i c =-100ma, i b =-5ma* i c =-500ma,i b =-50ma* i c =-1a, i b =-100ma* i c =-3a, i b =-300ma* base-emitter saturation voltage v be(sat) -970 -1110 mv i c =-3a, i b =-300ma* base-emitter turn-on voltage v be(on) -830 -950 mv i c =-3a, v ce =-5v* static forward current transfer ratio h fe 100 100 75 200 200 140 10 300 i c =-10ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-3a, v ce =-5v* i c =-10a, v ce =-5v* transition frequency f t 110 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 40 pf v cb =-20v, f=1mhz switching times t on t off 68 1030 ns ns i c =-1a, i b1 =-100ma i b2 =100ma, v cc =-50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device
3 - 285 3 - 286 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v olts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - n o r mal ise d gain v b e (sat) - (v olts) v b e - ( v olts) i c - c o l le c to r c u r r e nt (amps ) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =5v v ce =5v 300 200 100 h fe - t ypical gain v ce - collector voltage (volts) safe operating area 11000 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001 0.001 FZT955 FZT955 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -180 -210 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -180 -210 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -140 -170 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-150v v cb =-150v,t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-150v v cb =-150v,t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -30 -70 -110 -275 -60 -120 -150 -370 mv mv mv mv i c =-100ma, i b =-5ma* i c =-500ma,i b =-50ma* i c =-1a, i b =-100ma* i c =-3a, i b =-300ma* base-emitter saturation voltage v be(sat) -970 -1110 mv i c =-3a, i b =-300ma* base-emitter turn-on voltage v be(on) -830 -950 mv i c =-3a, v ce =-5v* static forward current transfer ratio h fe 100 100 75 200 200 140 10 300 i c =-10ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-3a, v ce =-5v* i c =-10a, v ce =-5v* transition frequency f t 110 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 40 pf v cb =-20v, f=1mhz switching times t on t off 68 1030 ns ns i c =-1a, i b1 =-100ma i b2 =100ma, v cc =-50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device
fzt956 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -220 -300 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -220 -300 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -200 -240 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-200v v cb =-200v,t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-200v v cb =-200v,t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -30 -120 -168 -50 -165 -275 mv mv mv i c =-100ma,i b =-10ma* i c =-1a, i b =-100ma* i c =-2a, i b =-400ma* base-emitter saturation voltage v be(sat) -970 -1110 mv i c =-2a, i b =-400ma base-emitter turn-on voltage v be(on) -810 -950 mv i c =-2a, v ce =-5v* static forward current transfer ratio h fe 100 100 50 200 200 150 10 300 i c =-10ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* i c =-5a, v ce =-5v* transition frequency f t 110 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 32 pf v cb =-20v, f=1mhz switching times t on t off 67 1140 ns ns i c =-1a, i b1 =-100ma i b2 =100ma, v cc =-50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device fzt956 3 - 287 3 - 288 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v - ( v ol ts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - norm al i sed g ai n v - ( v ol ts) v - ( v ol ts ) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h - t ypi cal gai n 0.001 0.001 0.001 0.001 0.001 safe operating area single pulse test tamb=25c 0.1 1 1 10 100 v ce - collector voltage (v) 10 dc 10ms 1ms 100 m s 100ms 1s 0.01 1000
fzt956 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -220 -300 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -220 -300 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -200 -240 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-200v v cb =-200v,t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-200v v cb =-200v,t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -30 -120 -168 -50 -165 -275 mv mv mv i c =-100ma,i b =-10ma* i c =-1a, i b =-100ma* i c =-2a, i b =-400ma* base-emitter saturation voltage v be(sat) -970 -1110 mv i c =-2a, i b =-400ma base-emitter turn-on voltage v be(on) -810 -950 mv i c =-2a, v ce =-5v* static forward current transfer ratio h fe 100 100 50 200 200 150 10 300 i c =-10ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* i c =-5a, v ce =-5v* transition frequency f t 110 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 32 pf v cb =-20v, f=1mhz switching times t on t off 67 1140 ns ns i c =-1a, i b1 =-100ma i b2 =100ma, v cc =-50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device fzt956 3 - 287 3 - 288 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v - ( v ol ts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - norm al i sed g ai n v - ( v ol ts) v - ( v ol ts ) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h - t ypi cal gai n 0.001 0.001 0.001 0.001 0.001 safe operating area single pulse test tamb=25c 0.1 1 1 10 100 v ce - collector voltage (v) 10 dc 10ms 1ms 100 m s 100ms 1s 0.01 1000
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